BUK9Y104-100B,115 NXP Semiconductors, BUK9Y104-100B,115 Datasheet - Page 11

• Manufacturer Part Number: BUK9Y104-100B,115
• Description: MOSFET N-CH 100V 14.8A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y104-100B,115

• Input Capacitance (ciss) @ Vds: 1139pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 99 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14.8A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5524-2

NXP Semiconductors
8. Revision history
Table 7.
BUK9Y104-100B
Product data sheet
Document ID
BUK9Y104-100B_4
Modifications:
BUK9Y104-100B_3
Revision history
Release date
20100407
20100211
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 04 — 7 April 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9Y104-100B
BUK9Y104-100B_2
Supersedes
BUK9Y104-100B_3
© NXP B.V. 2010. All rights reserved.
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