BUK9Y104-100B,115 NXP Semiconductors, BUK9Y104-100B,115 Datasheet - Page 8

• Manufacturer Part Number: BUK9Y104-100B,115
• Description: MOSFET N-CH 100V 14.8A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y104-100B,115

• Input Capacitance (ciss) @ Vds: 1139pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 99 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14.8A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5524-2

NXP Semiconductors
BUK9Y104-100B
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
0
max
typ
min
60
60
120
120
All information provided in this document is subject to legal disclaimers.
003aad557
T
T
j
j
(°C)
( ° C)
03aa29
180
180
Rev. 04 — 7 April 2010
Fig 10. Sub-threshold drain current as a function of
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
DSON
(A)
I
D
10
10
10
10
10
10
110
100
90
80
-1
-2
-3
-4
-5
-6
gate-source voltage
of gate-source voltage; typical values.
0
0
N-channel TrenchMOS logic level FET
4
min
BUK9Y104-100B
1
typ
8
max
2
12
V
© NXP B.V. 2010. All rights reserved.
GS
003aad565
003aac956
V
GS
(V)
(V)
16
3
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