BUK9Y104-100B,115 NXP Semiconductors, BUK9Y104-100B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK9Y104-100B,115
• Description: MOSFET N-CH 100V 14.8A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y104-100B,115

• Input Capacitance (ciss) @ Vds: 1139pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 99 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14.8A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5524-2

NXP Semiconductors
BUK9Y104-100B
Product data sheet
Fig 5.
Fig 7.
g
(S)
fs
(A)
I
D
40
30
20
10
30
25
20
15
10
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
2
10
4
V
GS
(V) = 10
6
20
All information provided in this document is subject to legal disclaimers.
8
I
D
003aac953
003aac958
V
5
(A)
DS
(V)
3.8
3.6
3.2
2.6
2.2
3
10
30
Rev. 04 — 7 April 2010
Fig 6.
Fig 8.
R
(mΩ)
DSon
(A)
I
D
400
300
200
100
20
15
10
5
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
2.2
T
N-channel TrenchMOS logic level FET
j
= 175 °C
1
10
2.8
BUK9Y104-100B
2
20
3.2
T
j
= 25 °C
3
3.6
3.8
30
V
5
© NXP B.V. 2010. All rights reserved.
GS
4
003aac957
003aac954
V
(V) = 10
I
D
GS
(A)
(V)
40
5
7 of 14