BUK9Y104-100B,115 NXP Semiconductors, BUK9Y104-100B,115 Datasheet - Page 4

• Manufacturer Part Number: BUK9Y104-100B,115
• Description: MOSFET N-CH 100V 14.8A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y104-100B,115

• Input Capacitance (ciss) @ Vds: 1139pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 99 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14.8A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5524-2

NXP Semiconductors
BUK9Y104-100B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
10
(A)
I
D
10
20
15
10
-1
2
1
5
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
1
0
Limit R
50
DSon
= V
100
DS
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
003aac524
mb
10
(°C)
DC
200
Rev. 04 — 7 April 2010
Fig 2.
(A)
I
AL
10
10
10
10
-1
-2
2
1
10
avalanche current as a function of avalanche
time
Single-pulse and repetitive avalanche rating;
-3
10
N-channel TrenchMOS logic level FET
2
10μ s
100μ s
1ms
10ms
100ms
10
-2
BUK9Y104-100B
10
V
-1
DS
(V)
1
© NXP B.V. 2010. All rights reserved.
t
003aac624
AL
003aac503
(1)
(2)
(3)
(ms)
10
10
3
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