BUK7Y18-55B,115 NXP Semiconductors, BUK7Y18-55B,115 Datasheet - Page 11

• Manufacturer Part Number: BUK7Y18-55B,115
• Description: MOSFET N-CH 55V 47.4A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y18-55B,115

• Input Capacitance (ciss) @ Vds: 1263pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47.4A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21.9nC @ 10V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5515-2

NXP Semiconductors
8. Revision history
Table 7.
BUK7Y18-55B
Product data sheet
Document ID
BUK7Y18-55B_4
Modifications:
BUK7Y18-55B_3
Revision history
Release date
20100407
20100218
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 04 — 7 April 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK7Y18-55B
BUK7Y18-55B_2
Supersedes
BUK7Y18-55B_3
© NXP B.V. 2010. All rights reserved.
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