BUK7Y18-55B,115 NXP Semiconductors, BUK7Y18-55B,115 Datasheet - Page 9

• Manufacturer Part Number: BUK7Y18-55B,115
• Description: MOSFET N-CH 55V 47.4A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y18-55B,115

• Input Capacitance (ciss) @ Vds: 1263pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47.4A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21.9nC @ 10V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5515-2

NXP Semiconductors
BUK7Y18-55B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
V
DS
= 14 V
10
V
DS
20
(A)
I
S
100
= 44 V
80
60
40
20
0
0.2
Q
All information provided in this document is subject to legal disclaimers.
G
003aac944
(nC)
0.4
30
Rev. 04 — 7 April 2010
T
j
= 175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
0.8
(pF)
C
10
10
10
T
10
j
4
3
2
10
= 25 °C
as a function of drain-source voltage; typical
values.
-1
1
N-channel TrenchMOS standard level FET
003aac947
V
SD
(V)
1.2
1
BUK7Y18-55B
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aac951
(V)
C
C
C
iss
oss
rss
10
2
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