BUK7Y18-55B,115 NXP Semiconductors, BUK7Y18-55B,115 Datasheet - Page 5

• Manufacturer Part Number: BUK7Y18-55B,115
• Description: MOSFET N-CH 55V 47.4A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y18-55B,115

• Input Capacitance (ciss) @ Vds: 1263pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47.4A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21.9nC @ 10V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5515-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7Y18-55B
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
-1
-2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
-6
0.05
0.02
Thermal characteristics
0.2
δ = 0.5
0.1
I
D
(A)
10
10
10
10
Parameter
thermal resistance
from junction to
mounting base
single shot
10
-1
-2
3
2
1
1
Limit R
10
-5
DSon
= V
DS
/ I
D
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
-4
Figure 5
10
DC
Rev. 04 — 7 April 2010
10
-3
100 μs
t
1 ms
10 ms
100 ms
p
= 10 μs
N-channel TrenchMOS standard level FET
10
2
10
-2
BUK7Y18-55B
V
Min
-
DS
(V)
10
P
-1
003aac613
t
Typ
-
p
T
10
t
p
© NXP B.V. 2010. All rights reserved.
(s)
3
003aac482
δ =
Max
1.76
t
T
p
t
1
Unit
K/W
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