BUK7Y18-55B,115 NXP Semiconductors, BUK7Y18-55B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK7Y18-55B,115
• Description: MOSFET N-CH 55V 47.4A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y18-55B,115

• Input Capacitance (ciss) @ Vds: 1263pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47.4A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21.9nC @ 10V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5515-2

NXP Semiconductors
BUK7Y18-55B
Product data sheet
Fig 6.
Fig 8.
g
(S)
fs
(A)
I
D
160
120
40
30
20
10
80
40
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
2
10
4
6
20
20
V
GS
All information provided in this document is subject to legal disclaimers.
8
I
D
003aac945
003aac950
(V) = 4.5
V
(A)
DS
15
6.5
10
6
5.5
5
(V)
7
8
10
30
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
(A)
DSon
I
D
80
60
40
20
60
40
20
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
N-channel TrenchMOS standard level FET
4.5
5
40
5.5
T
j
2
= 175 °C
6
BUK7Y18-55B
6.5
80
7
4
8
V
T
GS
120
j
10
= 25 °C
V
© NXP B.V. 2010. All rights reserved.
(V) = 20
GS
003aac949
003aac946
I
D
(V)
15
(A)
160
6
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