BUK7Y18-55B,115 NXP Semiconductors, BUK7Y18-55B,115 Datasheet - Page 8

• Manufacturer Part Number: BUK7Y18-55B,115
• Description: MOSFET N-CH 55V 47.4A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y18-55B,115

• Input Capacitance (ciss) @ Vds: 1263pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47.4A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21.9nC @ 10V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5515-2

NXP Semiconductors
BUK7Y18-55B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
−60
junction temperature
factor as a function of junction temperature
0
0
60
60
max
min
typ
120
120
All information provided in this document is subject to legal disclaimers.
T
T
j
j
(°C)
(°C)
03aa32
03nb25
180
180
Rev. 04 — 7 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSON
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
60
40
20
0
gate-source voltage
of gate-source voltage; typical values.
0
0
N-channel TrenchMOS standard level FET
4
2
8
min
BUK7Y18-55B
12
typ
4
max
V
© NXP B.V. 2010. All rights reserved.
16
GS
003aac948
V
(V)
GS
03aa35
(V)
20
6
8 of 14