ML610Q428-NNNTBZ03A7 Rohm Semiconductor, ML610Q428-NNNTBZ03A7 Datasheet - Page 382

• Manufacturer Part Number: ML610Q428-NNNTBZ03A7
• Description: MCU 8BIT 48K FLASH 128-TQFP
• Manufacturer: Rohm Semiconductor

Specifications of ML610Q428-NNNTBZ03A7

• Core Processor: nX-U8/100
• Core Size: 8-Bit
• Speed: 4.2MHz
• Connectivity: I²C, SSP, UART/USART
• Peripherals: LCD, Melody Driver, POR, PWM, WDT
• Number Of I /o: 14
• Program Memory Size: 48KB (24K x 16)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.1 V ~ 3.6 V
• Data Converters: A/D 2x12b, 2x24b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 70°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

27.3 Flash Memory Rewrite Function
Flash memory erase/write can be performed with the the memory mounted on board by using the commands from the
on-chip debug emulator (uEASE). For more details on the on-chip debug emulator, see “uEASE User’s Manual”.
Table 27-2 shows the Flash memory rewrite functions.
Table 27-3 shows the conditions and specifications of Flash memory rewrite.
Note:
When performing Flash memory rewrite (erase, write), a voltage within the range from 3.0V to 3.6 V needs to be
applied to the power supply voltage V
Chip erase
Block erase
1-word write
Random read
Rewrite count
Operating temperature
Operating voltage
Chip-erase time
Block-erase time
1-word (16 bits) write
Overall-word (32K × 16 bits) write
Table 27-3 Specifications of Flash Memory Rewrite
Parameter
Function
Table 27-2 Flash Memory Rewrite Functions
DD
.
V
V
V
PP
DD
DDL
27 – 2
Erase of 48 Kwords (overall area)
Erase of 8 Kwords (16 Kbytes)
Write of 1 word (2 bytes)
Read of input address
80
0°C to 40°C
41 μs (Typ.), 64 μs (Max.)
8 V (Typ.) (Supplied from uEASE)
3.0V to 3.6 V
2.7 V (Typ.) (Supplied from uEASE)
77 ms (Typ.), 100 ms (Max.)
77 ms (Typ.), 100 ms (Max.)
Approx. 1.35s (Typ.), Approx. 2.1s (Max.)
Specifications
ML610Q428/ML610Q429 User’s Manual
Outline
Chapter 27 On-Chip Debug Function