GS816032BGT-200 GSI TECHNOLOGY, GS816032BGT-200 Datasheet - Page 10

18M SYNCH BURST SRAM 512KX32, SMD

GS816032BGT-200

Manufacturer Part Number
GS816032BGT-200
Description
18M SYNCH BURST SRAM 512KX32, SMD
Manufacturer
GSI TECHNOLOGY
Datasheet

Specifications of GS816032BGT-200

Memory Size
18Mbit
Clock Frequency
200MHz
Access Time
6.5ns
Supply Voltage Range
2.3V To 2.7V, 3V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Operating Temperature Range
0°C To +70°C
Memory Configuration
512K X 32
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
1.
2.
3.
Rev: 1.03 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (B
control inputs, and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
X
CW
X
First Write
Burst Write
W
W
Simplified State Diagram
CW
10/24
W
CR
R
CR
R
Deselect
X
R
CR
First Read
Burst Read
R
GS816018/32/36BT-250/200/150
R
CR
A
X
, B
X
B
, B
C
, B
© 2004, GSI Technology
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, BW, and GW)

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