GS816032BGT-200 GSI TECHNOLOGY, GS816032BGT-200 Datasheet - Page 15

• Manufacturer Part Number: GS816032BGT-200
• Description: 18M SYNCH BURST SRAM 512KX32, SMD
• Manufacturer: GSI TECHNOLOGY

Specifications of GS816032BGT-200

• Memory Size: 18Mbit
• Clock Frequency: 200MHz
• Access Time: 6.5ns
• Supply Voltage Range: 2.3V To 2.7V, 3V To 3.6V
• Memory Case Style: TQFP
• No. Of Pins: 100
• Operating Temperature Range: 0°C To +70°C
• Memory Configuration: 512K X 32
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC Electrical Characteristics
Rev: 1.03 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output Leakage Current
Input Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
(except mode pins)
ZZ Input Current
FT Input Current
Parameter
Symbol
V
V
V
I
I
I
OH2
OH3
I
IN1
IN2
OL
IL
OL
15/24
Output Disable, V
I
I
OH
OH
= –8 mA, V
= –8 mA, V
Test Conditions
V
0 V ≤ V
V
0 V ≤ V
V
DD
DD
IN
I
OL
≥ V
≥ V
= 0 to V
= 8 mA
IN
IN
IN
IN
DDQ
DDQ
OUT
≤ V
≥ V
≥ V
≤ V
DD
= 2.375 V
= 3.135 V
= 0 to V
IH
IH
IL
IL
GS816018/32/36BT-250/200/150
DD
–100 uA
–1 uA
–1 uA
–1 uA
–1 uA
–1 uA
© 2004, GSI Technology
1.7 V
2.4 V
Min
—
100 uA
Max
0.4 V
1 uA
1 uA
1 uA
1 uA
1 uA
—
—