BLS6G2731-6G NXP Semiconductors, BLS6G2731-6G Datasheet - Page 2

• Manufacturer Part Number: BLS6G2731-6G
• Description: LDMOS,RF,6W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-6G

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 3.5A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-975C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLS6G2731-6G_1
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLS6G2731-6G -
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-case)
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
Package
Name Description
Rev. 01 — 19 February 2009
eared flanged ceramic package; 2 mounting holes; 2 leads
[1]
LDMOS S-Band radar power transistor
Simplified outline
Conditions
T
case
t
t
t
t
p
p
p
p
= 100 s;
= 200 s;
= 300 s;
= 100 s;
= 80 C; P
BLS6G2731-6G
1
2
Min
-
-
-
L
= 10 %
= 10 %
= 10 %
= 20 %
0.5
65
= 6 W
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Max
60
+13
3.5
+150
200
2
Typ
1.56
1.95
2.20
2.00
sym112
Version
SOT975C
1
3
Unit
V
V
A
C
C
2 of 11
Unit
K/W
K/W
K/W
K/W