BLS6G2731-6G NXP Semiconductors, BLS6G2731-6G Datasheet - Page 9

LDMOS,RF,6W,2700M-3100MHZ,32V

BLS6G2731-6G

Manufacturer Part Number
BLS6G2731-6G
Description
LDMOS,RF,6W,2700M-3100MHZ,32V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS6G2731-6G

Drain Source Voltage Vds
60V
Continuous Drain Current Id
3.5A
Operating Frequency Range
1.2GHz To 1.4GHz
Rf Transistor Case
SOT-975C
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLS6G2731-6G
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLS6G2731-6G
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLS6G2731-6G_1
Product data sheet
Document ID
BLS6G2731-6G_1
Revision history
Table 10.
Acronym
LDMOS
RF
S-Band
SMD
VSWR
Abbreviations
Release date
20090219
Rev. 01 — 19 February 2009
Description
Laterally Diffused Metal-Oxide Semiconductor
Radio Frequency
Short wave Band
Surface Mounted Device
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
LDMOS S-Band radar power transistor
Change notice
-
BLS6G2731-6G
Supersedes
-
© NXP B.V. 2009. All rights reserved.
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