BLS6G2731-6G NXP Semiconductors, BLS6G2731-6G Datasheet - Page 3

• Manufacturer Part Number: BLS6G2731-6G
• Description: LDMOS,RF,6W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-6G

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 3.5A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-975C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Characteristics
7. Application information
BLS6G2731-6G_1
Product data sheet
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
Symbol Parameter
V
V
I
I
I
g
R
Symbol
V
G
t
t
DSS
DSX
GSS
r
f
j
case
fs
D
(BR)DSS
GS(th)
CC
DS(on)
p
= 25 C unless otherwise specified.
= 25 C; unless otherwise specified, in a class-AB production circuit.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Characteristics
Application information
Parameter
supply voltage
power gain
drain efficiency
rise time
fall time
Rev. 01 — 19 February 2009
p
= 100 s; = 10 %; RF performance at V
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 0.63 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
LDMOS S-Band radar power transistor
Conditions
P
P
P
P
P
D
L
L
L
L
L
DS
D
D
= 6 W
= 6 W
= 6 W
= 6 W
= 6 W
= 0.18 mA
+ 3.75 V;
+ 3.75 V;
DS
= 18 mA
= 0.9 A
= 28 V
= 0 V
BLS6G2731-6G
Min
60
1.4
-
2.7
-
0.81
328
Min
-
14
30
-
-
DS
= 32 V; I
Typ
-
1.8
-
-
-
-
-
Typ
-
15
33
20
10
© NXP B.V. 2009. All rights reserved.
Dq
Max
-
2.4
1.4
-
140
-
1260
Max
32
-
-
50
50
= 25 mA;
3 of 11
Unit
V
V
A
nA
S
m
Unit
V
dB
%
ns
ns
A