BLS6G2731-6G NXP Semiconductors, BLS6G2731-6G Datasheet - Page 7

• Manufacturer Part Number: BLS6G2731-6G
• Description: LDMOS,RF,6W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-6G

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 3.5A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-975C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
Table 9.
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with
BLS6G2731-6G_1
Product data sheet
Component
C1
C2, C9
C3
C4, C8
C5, C10, C11
C6
C7
R1
R2
L1, L2, L3
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit
C1
C2
C6
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with
See
List of components (see
Table 9
for list of components.
R1
C3
C4
C5
Description
multilayer ceramic chip capacitor 20 nF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 10 F; 35 V
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 20 pF
multilayer ceramic chip capacitor 2.7 pF
electrolytic capacitor
SMD resistor
SMD resistor
copper (Cu) strips
L1
R2
Figure
10)
Rev. 01 — 19 February 2009
Value
47 F; 63 V
56
3.9
-
C8
C10
C9
LDMOS S-Band radar power transistor
Remarks
ATC 200B or equivalent
ATC 100B or equivalent
AVX TAJD106K035R or equivalent
ATC 700A or equivalent
ATC 100A or equivalent
ATC 100A or equivalent
L2
r
r
= 6.15 and thickness = 0.64 mm.
= 6.15 and thickness = 0.64 mm.
BLS6G2731-6G
C7
© NXP B.V. 2009. All rights reserved.
L3
C11
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