PH8230E NXP Semiconductors, PH8230E Datasheet - Page 10

• Manufacturer Part Number: PH8230E
• Description: MOSFET, N, 30V, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PH8230E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
8. Revision history
Table 6:
9397 750 12946
Product data
Rev Date
03
02
01
20040302
20030429
20030304
Revision history
CPCN
-
-
-
Description
Product data (9397 750 12946)
Modifications:
Product data (9397 750 11388)
Modifications:
Preliminary data (9397 750 11145)
•
•
•
•
t
Avalanche ruggedness data added in
Q
I
r
GSS
data revised in
g(tot)
data revised in
data revised in
Rev. 03 — 02 March 2004
Table 5 “Characteristics”
Table 5
Table 5
N-channelTrenchMOS™ enhanced logic level FET
Table 3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PH8230E
10 of 12