PH8230E NXP Semiconductors, PH8230E Datasheet - Page 10
![MOSFET, N, 30V, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
PH8230E
Manufacturer Part Number
PH8230E
Description
MOSFET, N, 30V, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PH8230E.pdf
(12 pages)
Specifications of PH8230E
Transistor Polarity
N Channel
Continuous Drain Current Id
67A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.6ohm
Rds(on) Test Voltage Vgs
4.5V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PH8230E
Manufacturer:
NXP
Quantity:
1 685
Company:
Part Number:
PH8230EЈ¬115
Manufacturer:
NXP
Quantity:
1 500
Philips Semiconductors
8. Revision history
Table 6:
9397 750 12946
Product data
Rev Date
03
02
01
20040302
20030429
20030304
Revision history
CPCN
-
-
-
Description
Product data (9397 750 12946)
Modifications:
Product data (9397 750 11388)
Modifications:
Preliminary data (9397 750 11145)
•
•
•
•
t
Avalanche ruggedness data added in
Q
I
r
GSS
data revised in
g(tot)
data revised in
data revised in
Rev. 03 — 02 March 2004
Table 5 “Characteristics”
Table 5
Table 5
N-channelTrenchMOS™ enhanced logic level FET
Table 3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PH8230E
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