PH8230E NXP Semiconductors, PH8230E Datasheet - Page 7

• Manufacturer Part Number: PH8230E
• Description: MOSFET, N, 30V, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PH8230E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
9397 750 12946
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
D
GS
(V)
= 1 mA; V
junction temperature.
3
2
= 0 V; f = 1 MHz
0
1
60
DS
= V
0
GS
60
max
min
typ
(pF)
10 4
10 3
10 2
C
120
10 -1
T j ( C)
003aaa414
180
Rev. 03 — 02 March 2004
1
Fig 10. Sub-threshold drain current as a function of
N-channelTrenchMOS™ enhanced logic level FET
10
T
(A)
I D
j
10 -2
10 -5
10 -3
10 -4
= 25 C; V
gate-source voltage.
V DS (V)
0
003aaa374
C oss
C iss
C rss
DS
10 2
= 5 V
min
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
typ
2
max
PH8230E
V GS (V)
03am28
3
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