PH8230E NXP Semiconductors, PH8230E Datasheet - Page 6

• Manufacturer Part Number: PH8230E
• Description: MOSFET, N, 30V, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PH8230E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
9397 750 12946
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
j
j
I D
100
= 25 C
= 25 C
10
75
50
25
8
6
4
2
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
2.9 V
3 V
2
0.5
10 V
4 V
3.1 V
4
3.2 V
1
6
V GS = 3.5 V
V GS = 3.2 V
1.5
10 V
8
V DS (V)
4 V
003aaa371
003aaa373
I D (A)
3.1 V
2.8V
2.9 V
3 V
10
2
Rev. 03 — 02 March 2004
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
N-channelTrenchMOS™ enhanced logic level FET
T
a
(A)
j
I D
a
1.5
0.5
= 25 C and 150 C; V
=
10
2
1
0
8
6
4
2
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
1
DSon 25 C
R
DSon
0
T j = 150 C
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
60
I
D
x R
3
25 C
DSon
120
PH8230E
V GS (V)
T j ( C)
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03aa27
180
4
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