PH8230E NXP Semiconductors, PH8230E Datasheet - Page 6
![MOSFET, N, 30V, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
PH8230E
Manufacturer Part Number
PH8230E
Description
MOSFET, N, 30V, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PH8230E.pdf
(12 pages)
Specifications of PH8230E
Transistor Polarity
N Channel
Continuous Drain Current Id
67A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.6ohm
Rds(on) Test Voltage Vgs
4.5V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PH8230E
Manufacturer:
NXP
Quantity:
1 685
Company:
Part Number:
PH8230EЈ¬115
Manufacturer:
NXP
Quantity:
1 500
Philips Semiconductors
9397 750 12946
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
j
j
I D
100
= 25 C
= 25 C
10
75
50
25
8
6
4
2
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
2.9 V
3 V
2
0.5
10 V
4 V
3.1 V
4
3.2 V
1
6
V GS = 3.5 V
V GS = 3.2 V
1.5
10 V
8
V DS (V)
4 V
003aaa371
003aaa373
I D (A)
3.1 V
2.8V
2.9 V
3 V
10
2
Rev. 03 — 02 March 2004
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
N-channelTrenchMOS™ enhanced logic level FET
T
a
(A)
j
I D
a
1.5
0.5
= 25 C and 150 C; V
=
10
2
1
0
8
6
4
2
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
1
DSon 25 C
R
DSon
0
T j = 150 C
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
60
I
D
x R
3
25 C
DSon
120
PH8230E
V GS (V)
T j ( C)
003aaa372
03aa27
180
4
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