PH8230E NXP Semiconductors, PH8230E Datasheet - Page 9
![MOSFET, N, 30V, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
PH8230E
Manufacturer Part Number
PH8230E
Description
MOSFET, N, 30V, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PH8230E.pdf
(12 pages)
Specifications of PH8230E
Transistor Polarity
N Channel
Continuous Drain Current Id
67A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.6ohm
Rds(on) Test Voltage Vgs
4.5V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PH8230E
Manufacturer:
NXP
Quantity:
1 685
Company:
Part Number:
PH8230EЈ¬115
Manufacturer:
NXP
Quantity:
1 500
Philips Semiconductors
7. Package outline
Fig 14. SOT669 (LFPAK).
9397 750 12946
Product data
Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
DIMENSIONS (mm are the original dimensions)
UNIT
mm
H
OUTLINE
VERSION
SOT669
L 1
L 2
D
1.20
1.01
A
0.15
0.00
A 1
1.10
0.95
A 2
1
e
0.25
A 3
IEC
2
b 2
E
0.50
0.35
b
1/2
4.41
3.62
3
e
b 2
b
2.2
2.0
b 3
MO-235
JEDEC
4
0.9
0.7
b 4
0
A
REFERENCES
w
Rev. 03 — 02 March 2004
0.25
0.19
M
c
mounting
A
base
0.30
0.24
c 2
c 2
JEITA
scale
D
4.10
3.80
2.5
(1)
A 2
N-channelTrenchMOS™ enhanced logic level FET
A
D 1
max
4.20
c
(1)
A 1
E
5.0
4.8
C
(1)
C
X
E 1
5 mm
3.3
3.1
(1)
1.27
e
D 1
detail X
6.2
5.8
H
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
0.85
0.40
L
1.3
0.8
L 1
b 3
L
E 1
1.3
0.8
L 2
PH8230E
0.25
ISSUE DATE
w
(A )
b 4
03-02-05
03-09-15
3
y C
0.1
y
SOT669
8
0
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