MPSA29 D27Z Fairchild Semiconductor, MPSA29 D27Z Datasheet

BIPOLAR TRANSISTOR, NPN, 100V TO-92

MPSA29 D27Z

Manufacturer Part Number
MPSA29 D27Z
Description
BIPOLAR TRANSISTOR, NPN, 100V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MPSA29 D27Z

Transistor Polarity
NPN
Power Dissipation Pd
625mW
Dc Collector Current
800mA
C-e Breakdown Voltage
100V
Power (ptot)
625mW
Leaded Process Compatible
Yes
Mounting Type
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CES
CBO
EBO
JC
JA
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03. See MPSA28 for characteristics.
Absolute Maximum Ratings*
, T
*
NPN Darlington Transistor
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B E
MPSA29
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
MPSA29
Discrete POWER & Signal
Max
83.3
625
200
5.0
-55 to +150
Value
100
100
800
12
Technologies
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C

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MPSA29 D27Z Summary of contents

Page 1

... Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & Signal Technologies Value Units 100 V 100 V ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CES V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Collector Cutoff Current CES I Emitter Cutoff Current EBO ON CHARACTERISTICS ...

Page 3

... PROELECTRON SERIES), 96 L34Z TO-92 STANDARD NO LEADCLIP STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 FSCINT Label ©2001 Fairchild Semiconductor Corporation TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles 5 Reels per Intermediate Box F63TNR Label Customized Label AMMO PACK OPTION See Fig 3 ...

Page 4

TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Style “A”, D26Z, D70Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE ...

Page 5

TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4 User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ELECT ROSTATIC SEN SITIVE D EVICES F63TNR Label ...

Page 6

... TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 January 2000, Rev. B ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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