MPSA29 D27Z Fairchild Semiconductor, MPSA29 D27Z Datasheet - Page 2

• Manufacturer Part Number: MPSA29 D27Z
• Description: BIPOLAR TRANSISTOR, NPN, 100V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSA29 D27Z

• Transistor Polarity: NPN
• Power Dissipation Pd: 625mW
• Dc Collector Current: 800mA
• C-e Breakdown Voltage: 100V
• Power (ptot): 625mW
• Leaded Process Compatible: Yes
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
V
V
I
I
I
ON CHARACTERISTICS*
OFF CHARACTERISTICS
h
V
V
SMALL SIGNAL CHARACTERISTICS
f
C
Symbol
CBO
CES
EBO
T
FE
(BR)CES
(BR)CBO
(BR)EBO
CE(
BE(
obo
Electrical Characteristics
*
on
sat
Pulse Test: Pulse Width
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Output Capacitance
300 s, Duty Cycle
Parameter
2.0%
TA = 25°C unless otherwise noted
V
V
I
I
I
I
I
I
V
V
V
I
f = 100 MHz
V
C
C
C
C
C
E
C
CE
CE
CB
CB
CE
EB
= 10 A, I
= 10 mA, I
= 100 mA, I
= 100 mA, V
= 10 mA, V
= 100 A, I
= 100 A, I
= 10 V, I
= 5.0 V, I
= 5.0 V, I
= 10 V, I
= 80 V, I
= 80 V, I
Test Conditions
C
C
B
E
E
E
C
C
B
E
CE
= 0
B
= 0.01 mA
= 0
= 0
= 0
= 0, f = 1.0 MHz
= 10 mA
= 100 mA
CE
= 0
= 0
= 0.1 mA
= 5.0 V,
= 5.0 V
NPN Darlington Transistor
10,000
10,000
Min
125
100
100
12
Max
100
500
100
1.2
1.5
2.0
8.0
(continued)
Units
MHz
pF
nA
nA
nA
V
V
V
V
V
V