BSP295L6327 Infineon Technologies, BSP295L6327 Datasheet - Page 7

• Manufacturer Part Number: BSP295L6327
• Description: MOSFET, N, LOGIC, REEL 1K
• Manufacturer: Infineon Technologies

Specifications of BSP295L6327

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.7A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.1V
• Rohs Compliant: Yes

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
= f (T
V
60
40
30
20
10
60
57
56
55
54
53
52
51
50
49
48
47
46
45
D
0
-60
20
BSP295
= 3.9 A, V
= f (T
j
)
40
-20
j
)
60
DD
20
80
= 25 V, R
60
100
100
120
GS
= 25
°C
°C
T
T
j
j
160
180
Page 7
Rev 1.2
14 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP295
I
D
G
= 1.8 A pulsed, T
4
); parameter: V
8
0.2 V
0.5 V
0.8 V
12
DS max
DS max
DS max
DS
j
16
= 25 °C
2006-05-15
,
BSP295
nC
Q
G
24