QSD124A4R0 Fairchild Semiconductor, QSD124A4R0 Datasheet
QSD124A4R0
Manufacturer Part Number
QSD124A4R0
Description
Photodetector Transistors QSD124 T-R
Manufacturer
Fairchild Semiconductor
Type
IR Chipr
Datasheet
1.QSD124.pdf
(4 pages)
Specifications of QSD124A4R0
Maximum Power Dissipation
100 mW
Maximum Dark Current
100 nA
Collector- Emitter Voltage Vceo Max
30 V
Fall Time
7 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Rise Time
7 us
Package / Case
T-1 3/4
Wavelength
880 nm
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
100nA
Light Current
6mA
Power Dissipation
100mW
Peak Wavelength
880nm
Half-intensity Angle
24deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QSD124A4R0_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QSD124A4R0
Manufacturer:
FSC
Quantity:
6 000
DESCRIPTION
The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.
FEATURES
• NPN Silicon Phototransistor
• Package Type: T-1 3/4
• Notched Emitter: QED12X/QED22X/QED23X
• Narrow Reception Angle: 24°C
• Daylight Filter
• Package Material and Color: Black Epoxy
• High Sensitivity
DS300361
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
2001 Fairchild Semiconductor Corporation
unless otherwise specified.
EMITTER
0.500 (1.25)
REFERENCE
7/20/01
SURFACE
0.800 (20.3)
0.020 (0.51)
PACKAGE DIMENSIONS
SQ. (2X)
MIN
0.195 (4.95)
0.100 (2.54) NOM
0.305 (7.75)
0.040 (1.02)
0.240 (6.10)
0.215 (5.45)
NOM
COLLECTOR
QSD122
1 OF 4
PLASTIC SILICON INFRARED
QSD123
PHOTOTRANSISTOR
SCHEMATIC
COLLECTOR
EMITTER
www.fairchildsemi.com
QSD124
Related parts for QSD124A4R0
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Photodetector Transistors 6mA PHOTO TRANS
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
QSD124A4R0 Summary of contents
Page 1
... Package Type: T-1 3/4 • Notched Emitter: QED12X/QED22X/QED23X • Narrow Reception Angle: 24°C • Daylight Filter • Package Material and Color: Black Epoxy • High Sensitivity 2001 Fairchild Semiconductor Corporation DS300361 7/20/01 PLASTIC SILICON INFRARED QSD122 0.305 (7.75) 0.040 (1.02) ...
Page 2
ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron) (2,3,4) Soldering Temperature (Flow) (2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation (1) NOTE: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol ...
Page 3
Figure 1. Light Current vs. Radiant Intensity 100 10 1 0.1 0.0 0.2 0 Radiant Intensity (mW/cm e Figure 3. Dark Current vs. Collector - Emitter Voltage ...
Page 4
... DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS ...