QSB363GR Fairchild Semiconductor, QSB363GR Datasheet - Page 3

• Manufacturer Part Number: QSB363GR
• Description: Photodetector Transistors Phototransistor Si Infrared
• Manufacturer: Fairchild Semiconductor
• Type: Photo Transistorr

Specifications of QSB363GR

• Maximum Power Dissipation: 75 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 15 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Rise Time: 15 us
• Package / Case: T-3/4
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 0.4V
• Dark Current (max): 100nA
• Light Current: 1.5mA
• Power Dissipation: 75mW
• Peak Wavelength: 940nm
• Half-intensity Angle: 24deg
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: T-3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

QSB363 Rev. 1.0.2
Typical Performance Curves
10
100
160
140
120
100
10
10
10
10
Fig. 1 Collector Power Dissipation vs.
80
60
40
20
5
2
5
2
5
2
5
2
80
60
40
20
-10
Fig. 3 Relative Collector Current vs.
-25
-6
-7
-8
-9
0
0
0
0
Fig. 5 Collector Dark Current vs.
V
CE
V
E e = 1 mW/cm
CE
= 20 V
10
= 5 V
Ambient Temperature T
Ambient Temperature T
Ambient Temperature
Ambient Temperature
Ambient Temperature
0
Ambient Temperature (°C)
25
20
2
25
30
50
40
50
50
A
A
75
(˚C)
75 85 100
(˚C)
60
100
70
3
0.001
1.0
0.8
0.6
0.4
0.2
0.01
14
12
10
0.1
8
6
4
2
0
0
10
1
0.01
700
0
V
T
A
CE
Fig. 6 Collector Current vs.
= 25˚C
Fig. 4 Collector Current vs.
Fig. 2 Spectral Sensitivity
Collector Emitter Voltage V
= 5 V
Collector Emitter Voltage
800
Irradiance E
1
Wavelength λ (nm)
0.1
Irradiance
900
2
e
Ee=1.50mW/cm
Ee=1.25mW/cm
Ee=1.0mW/cm
Ee=0.75mW/cm
Ee=0.5mW/cm
1000
(mW/cm
1
3
1100
CE
T
2
)
A
= 25˚C
(V)
2
2
2
2
2
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1300
10
4