QSB363GR Fairchild Semiconductor, QSB363GR Datasheet - Page 3
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QSB363GR
Manufacturer Part Number
QSB363GR
Description
Photodetector Transistors Phototransistor Si Infrared
Manufacturer
Fairchild Semiconductor
Type
Photo Transistorr
Datasheet
1.QSB363.pdf
(5 pages)
Specifications of QSB363GR
Maximum Power Dissipation
75 mW
Maximum Dark Current
100 nA
Collector- Emitter Voltage Vceo Max
30 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Rise Time
15 us
Package / Case
T-3/4
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
100nA
Light Current
1.5mA
Power Dissipation
75mW
Peak Wavelength
940nm
Half-intensity Angle
24deg
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
2
Package Type
T-3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QSB363GR
Manufacturer:
FSC
Quantity:
4 000
Company:
Part Number:
QSB363GR
Manufacturer:
TOSHIBA
Quantity:
45 700
QSB363 Rev. 1.0.2
Typical Performance Curves
10
100
160
140
120
100
10
10
10
10
Fig. 1 Collector Power Dissipation vs.
80
60
40
20
5
2
5
2
5
2
5
2
80
60
40
20
-10
Fig. 3 Relative Collector Current vs.
-25
-6
-7
-8
-9
0
0
0
0
Fig. 5 Collector Dark Current vs.
V
CE
V
E e = 1 mW/cm
CE
= 20 V
10
= 5 V
Ambient Temperature T
Ambient Temperature T
Ambient Temperature
Ambient Temperature
Ambient Temperature
0
Ambient Temperature (°C)
25
20
2
25
30
50
40
50
50
A
A
75
(˚C)
75 85 100
(˚C)
60
100
70
3
0.001
1.0
0.8
0.6
0.4
0.2
0.01
14
12
10
0.1
8
6
4
2
0
0
10
1
0.01
700
0
V
T
A
CE
Fig. 6 Collector Current vs.
= 25˚C
Fig. 4 Collector Current vs.
Fig. 2 Spectral Sensitivity
Collector Emitter Voltage V
= 5 V
Collector Emitter Voltage
800
Irradiance E
1
Wavelength λ (nm)
0.1
Irradiance
900
2
e
Ee=1.50mW/cm
Ee=1.25mW/cm
Ee=1.0mW/cm
Ee=0.75mW/cm
Ee=0.5mW/cm
1000
(mW/cm
1
3
1100
CE
T
2
)
A
= 25˚C
(V)
2
2
2
2
2
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10
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