QSC113C6R0 Fairchild Semiconductor, QSC113C6R0 Datasheet - Page 2

• Manufacturer Part Number: QSC113C6R0
• Description: Photodetector Transistors Si Phototransistor Plastic
• Manufacturer: Fairchild Semiconductor
• Type: Photo Transistorr

Specifications of QSC113C6R0

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 5 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 5 us
• Package / Case: T-1
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 0.4V
• Dark Current (max): 100nA
• Light Current: 9.6mA
• Power Dissipation: 100mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 8deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
Absolute Maximum Ratings
Notes:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics
Note:
5. λ = 880 nm, AlGaAs.
Symbol Parameter
V
BV
BV
I
I
C(ON)
CE(sat)
λ
CEO
Θ
Symbol
PS
t
CEO
ECO
t
r
f
T
T
T
T
V
V
SOL-F
SOL-I
OPR
P
STG
CE
EC
D
Peak Sensitivity Wavelength
Reception Angle
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current QSC112 Ee = 0.5 mW/cm
On-State Collector Current QSC113
On-State Collector Current QSC114
Saturation Voltage
Rise Time
Fall Time
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
(1)
(T
A
= 25°C unless otherwise specified)
(T
(2,3,4)
A
(2,3)
=25°C)
V
I
I
Ee = 0.5 mW/cm
V
C
E
CE
CC
= 1 mA
= 100 µA
= 10 V, Ee = 0
= 5 V, R
Test Conditions
2
L
= 100 Ω , I
2
2
, V
, I
C
CE
= 0.5 mA
= 5 V
C
= 2 mA
(5)
(5)
260 for 10 sec
240 for 5 sec
-40 to +100
-40 to +100
Min.
2.40
4.00
Rating
30
5
1
100
30
5
Typ.
880
5.0
5.0
±4
Max. Units
9.60
100
0.4
www.fairchildsemi.com
4
Units
mW
°C
°C
°C
°C
V
V
mA
nm
nA
µs
V
V
V
°