H11G1SM Fairchild Semiconductor, H11G1SM Datasheet - Page 2

• Manufacturer Part Number: H11G1SM
• Description: Transistor Output Optocouplers Hi Volt Photodarling
• Manufacturer: Fairchild Semiconductor

Specifications of H11G1SM

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 100 V
• Maximum Collector Emitter Saturation Voltage: 1 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 260 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
TOTAL DEVICE
EMITTER
DETECTOR
Symbol
I
V
T
T
T
F
OPR
P
V
P
P
STG
CEO
SOL
(pk)
I
F
D
R
D
D
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ T
Forward Input Current
Reverse Input Voltage
Forward Current – Peak (1µs pulse, 300pps)
LED Power Dissipation @ T
Collector-Emitter Voltage
Photodetector Power Dissipation @ T
Derate Above 25°C
Derate Above 25°C
Derate Above 25°C
H11G1M
H11G2M
H11G3M
Parameter
A
= 25°C
A
= 25°C
A
= 25°C
2
260 for 10 sec
-40 to +150
-40 to +100
Value
2.67
260
100
100
200
3.5
6.0
3.0
1.8
60
80
55
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mW/°C
mW/°C
mW/°C
Units
mW
mW
mW
mA
°C
°C
°C
V
A
V