FOD617DSD Fairchild Semiconductor, FOD617DSD Datasheet - Page 4

• Manufacturer Part Number: FOD617DSD
• Description: Transistor Output Optocouplers Phototransistor Output Optocoupler
• Manufacturer: Fairchild Semiconductor

Specifications of FOD617DSD

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 320 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-4 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.1.1
Electrical Characteristics
Transfer Characteristics
Isolation Characteristics
*Typical values at T
Notes:
1. Current Transfer Ratio (CTR) = I
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol AC Characteristic
Symbol
R
C
V
f
t
ISO
ISO
ISO
t
C
r
f
Cut-Off Frequency
Response Time (Rise)
Response Time (Fall)
Input-Output Isolation
Voltage
Isolation Resistance
Isolation Capacitance
Characteristic
(3)
A
= 25°C
(Continued)
C
/I
(T
FOD814
FOD814
FOD617
FOD817
FOD814
FOD617
FOD817
Device
F
A
x 100%.
FOD814
FOD617
FOD817
FOD814
FOD617
FOD817
FOD814
FOD617
FOD817
= 25°C Unless otherwise specified.) (Continued)
Device
V
-3dB
V
CE
CE
f = 60Hz, t = 1 min,
I
V
V
I-O
Test Conditions
I-O
I-O
= 5V, I
= 2 V, I
= 500VDC
= 0, f = 1 MHz
2µA
Test Conditions
4
C
C
= 2mA, R
= 2mA, R
L
L
= 100 ,
= 100
5x10
5000
Min.
10
(2)
1x10
Typ.*
Min.
15
0.6
11
Typ.* Max. Unit
80
4
3
Max.
1.0
www.fairchildsemi.com
18
18
Vac(rms)
Units
pf
kHz
µs
µs