MOCD213R1VM Fairchild Semiconductor, MOCD213R1VM Datasheet

Transistor Output Optocouplers 2Ch Optocoupler Phototransistor

MOCD213R1VM

Manufacturer Part Number
MOCD213R1VM
Description
Transistor Output Optocouplers 2Ch Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MOCD213R1VM

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
2 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
2500 Vrms
Maximum Forward Diode Voltage
1.55 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2005 Fairchild Semiconductor Corporation
MOCD213M Rev. 1.0.1
MOCD213M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers
Features
Applications
Schematic
U.L. recognized (File #E90700, Volume 2)
VDE recognized (File #136616) (add option “V” for
VDE approval, i.e, MOCD213VM)
Dual channel coupler
Convenient plastic SOIC-8 surface mountable
package style
Minimum current transfer ratio 100% with input current
of 10mA
Minimum BV
Standard SOIC-8 footprint, with 0.050" lead spacing
Compatible with dual wave, vapor phase and
IR reflow soldering
High input-output isolation of 2500 V
guaranteed
Feedback control circuits
Interfacing and coupling systems of different
potentials and impedances
General purpose switching circuits
Monitor and detection circuits
CATHODE 1
CATHODE 2
ANODE 1
ANODE 2
CEO
1
2
3
4
of 70 Volts guaranteed
AC(rms)
8
7
6
5
COLLECTOR 1
EMITTER 1
COLLECTOR 2
EMITTER 2
Description
The MOCD213M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two mono-
lithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.
www.fairchildsemi.com
April 2009

Related parts for MOCD213R1VM

MOCD213R1VM Summary of contents

Page 1

... CATHODE 1 2 ANODE 2 3 CATHODE 2 4 ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 Description The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two mono- lithic silicon phototransistor detectors surface mountable, small outline plastic package ideally suited for high density applications and eliminates the need for through-the-board mounting ...

Page 2

... TOTAL DEVICE V Input-Output Isolation Voltage (f = 60Hz min.) ISO P Total Device Power Dissipation @ T D Derate above 25°C T Ambient Operating Temperature Range A T Storage Temperature Range stg ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 25°C Unless otherwise specified) A Rating = 25° 25° 25° Value ...

Page 3

... For this test, Pins and 4 are common and Pins and 8 are common rating of 2500 V for min. is equivalent to a rating of 3,000 V ISO AC(rms) 4. Current Transfer Ratio (CTR ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 25°C unless otherwise specified) A Test Conditions I = 30mA ...

Page 4

... I - LED FORWARD CURRENT (mA) F Fig. 3 Output Current vs. Ambient Temperature NORMALIZED 0.1 -80 -60 -40 - – AMBIENT TEMPERATURE ( A ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 0.1 100 0.01 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 120 o C) Fig. 5 Dark Current vs. Ambient Temperature ...

Page 5

... TEST CIRCUIT INPUT ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 = 10V R L 10% OUTPUT 90% Adjust I to produce I = 2mA F C Figure 6. Switching Time Test Circuit and Waveform 5 WAVEFORMS INPUT PULSE OUTPUT PULSE off www.fairchildsemi.com ...

Page 6

... Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifi ...

Page 7

... Ordering Information Option Order Entry Identifi R2V Marking Information Definitions ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 V VDE 0884 R2 Tape and reel (2500 units per reel) R2V VDE 0884, Tape and reel (2500 units per reel) 1 D213 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – ...

Page 8

... Carrier Tape Specifications 3.50 0.20 0.30 MAX 8.3 0.10 0.1 MAX User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 8.0 0.10 2.0 0.05 4.0 0.10 6.40 0.20 8 Ø1.5 MIN 1.75 0.10 5.5 0.05 12.0 0.3 5.20 0.20 Ø ...

Page 9

... Liquidous Temperature (T Time (t ) Maintained Above (T L Peak Body Package Temperature Time (t ) within 5°C of 260°C P Ramp-down Rate (T Time 25°C to Peak Temperature ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S Tsmax Preheat Area Tsmin t s 120 240 Time 25° ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...

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