GBU6M Fairchild Semiconductor, GBU6M Datasheet
GBU6M
Manufacturer Part Number
GBU6M
Description
RECT BRIDGE GPP 6A 1000V GBU
Manufacturer
Fairchild Semiconductor
Datasheet
1.GBU6J.pdf
(3 pages)
Specifications of GBU6M
Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
6A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
GBU
Product
Single Phase Bridge
Peak Reverse Voltage
1000 V
Maximum Rms Reverse Voltage
700 V
Forward Continuous Current
6 A
Max Surge Current
175 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Power Dissipation
12 W
Maximum Operating Temperature
+ 150 C
Length
22.3 mm
Width
3.56 mm
Height
18.8 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GBU6M
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Company:
Part Number:
GBU6M-E3/51
Manufacturer:
PANJIT
Quantity:
1 000
Part Number:
GBU6MR
Manufacturer:
PANJIT/强茂
Quantity:
20 000
Part Number:
GBU6MS
Manufacturer:
PANJIT/ 强茂
Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Symbol
Bridge Rectifiers
P
R
R
Absolute Maximum Ratings*
*
Thermal Characteristics
*
**
Electrical Characteristics
Features
•
•
•
•
•
V
V
V
I
I
T
T
V
I
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
D
Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).
F(AV)
FSM
R
JA
JL
Device mounted on Al plate with 2.6 x 1.4" x 0.06" (6,5 x 3.5 x 0.15 cm).
stg
J
RRM
RMS
R
F
Glass passivated junction.
Surge overload rating: 175 amperes peak.
Reliable low cost construction utilizing
molded plastic technique.
Ideal for printed circuit board.
UL certified, UL #E111753.
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage, per element @ 6.0 A
Reverse Current, per element
I
Power Dissipation
Thermal Resistance, Junction to Ambient,* per leg
Thermal Resistance, Junction to Lead,** per leg
2
t rating for fusing
8.3 ms Single Half-Sine-Wave
T
T
Parameter
Parameter
A
A
Parameter
= 25 C
= 125 C
(Rated V
GBU6A - GBU6M
t < 8.35 ms
@ rated V
T
A
R
)
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
A
= 100°C
R
6A
50
35
50
100
100
6B
70
+ ~
200
140
200
6D
GBU
~
-55 to +150
-55 to +150
Device
Value
-
400
280
400
6G
Value
175
500
127
6.0
1.0
5.0
18.6
3.1
12
600
420
600
6J
800
560
800
6K
1000
1000
700
6M
GBU6A-GBU6M, Rev. C
Units
Units
Units
C/W
A
W
C/W
V
V
V
A
A
V
C
C
A
A
2
s
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GBU6M Summary of contents
Page 1
... GBU Value Units 200 400 600 800 1000 V 140 280 420 560 700 V 200 400 600 800 1000 V 6.0 A 175 A -55 to +150 -55 to +150 Value Units 12 W 18.6 C/W 3.1 C/W Device Units 1.0 V 5.0 500 127 A GBU6A-GBU6M, Rev ...
Page 2
... Figure 4. Non-Repetitive Surge Current º 1.0 MHz Visg = 50m Vp Reverse Voltage, V [V] R Figure 5. Total Capacitance Bridge Rectifiers (continued) º Pulse Width = 300 s 1% Duty Cycle 0.8 0.9 1 1.1 1.2 1.3 1.4 Forward Voltage, V [V] F º 105 100 Number of Cycles at 60Hz 100 GBU6A-GBU6M, Rev. C ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...