GBU6M_Q Fairchild Semiconductor, GBU6M_Q Datasheet
GBU6M_Q
Manufacturer Part Number
GBU6M_Q
Description
Bridge Rectifiers 6A Bridge Rectifier
Manufacturer
Fairchild Semiconductor
Datasheet
1.GBU6J_Q.pdf
(3 pages)
Specifications of GBU6M_Q
Product
Single Phase Bridge
Peak Reverse Voltage
1000 V
Maximum Rms Reverse Voltage
700 V
Forward Continuous Current
6 A
Max Surge Current
175 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Power Dissipation
12 W
Maximum Operating Temperature
+ 150 C
Length
22.3 mm
Width
3.56 mm
Height
18.8 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Package / Case
GBU-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Symbol
Bridge Rectifiers
P
R
R
Absolute Maximum Ratings*
*
Thermal Characteristics
*
**
Electrical Characteristics
Features
•
•
•
•
•
V
V
V
I
I
T
T
V
I
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
D
Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).
F(AV)
FSM
R
JA
JL
Device mounted on Al plate with 2.6 x 1.4" x 0.06" (6,5 x 3.5 x 0.15 cm).
stg
J
RRM
RMS
R
F
Glass passivated junction.
Surge overload rating: 175 amperes peak.
Reliable low cost construction utilizing
molded plastic technique.
Ideal for printed circuit board.
UL certified, UL #E111753.
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage, per element @ 6.0 A
Reverse Current, per element
I
Power Dissipation
Thermal Resistance, Junction to Ambient,* per leg
Thermal Resistance, Junction to Lead,** per leg
2
t rating for fusing
8.3 ms Single Half-Sine-Wave
T
T
Parameter
Parameter
A
A
Parameter
= 25 C
= 125 C
(Rated V
GBU6A - GBU6M
t < 8.35 ms
@ rated V
T
A
R
)
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
A
= 100°C
R
6A
50
35
50
100
100
6B
70
+ ~
200
140
200
6D
GBU
~
-55 to +150
-55 to +150
Device
Value
-
400
280
400
6G
Value
175
500
127
6.0
1.0
5.0
18.6
3.1
12
600
420
600
6J
800
560
800
6K
1000
1000
700
6M
GBU6A-GBU6M, Rev. C
Units
Units
Units
C/W
A
W
C/W
V
V
V
A
A
V
C
C
A
A
2
s
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GBU6M_Q Summary of contents
Page 1
... Device mounted on Al plate with 2.6 x 1.4" x 0.06" (6,5 x 3.5 x 0.15 cm). Electrical Characteristics Symbol Parameter V Forward Voltage, per element @ 6 Reverse Current, per element 125 rating for fusing 2001 Fairchild Semiconductor Corporation GBU6A - GBU6M T = 25°C unless otherwise noted 100 35 70 (Rated 100 R = 100° 25° ...
Page 2
... T = 100 0.1 º 0. Percent of Rated Peak Reverse Voltage [%] Figure 3. Reverse Current vs Reverse Voltage 400 100 50 10 2001 Fairchild Semiconductor Corporation 100 10 1 0.1 150 0.7 Figure 2. Forward Voltage Characteristics 175 140 105 100 120 140 1 Figure 4. Non-Repetitive Surge Current º ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...