FS25R12KE3G Infineon Technologies, FS25R12KE3G Datasheet - Page 3
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FS25R12KE3G
Manufacturer Part Number
FS25R12KE3G
Description
IGBT Modules N-CH 1.2KV 40A
Manufacturer
Infineon Technologies
Datasheet
1.FS25R12KE3G.pdf
(9 pages)
Specifications of FS25R12KE3G
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
40 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
Econo 2
Ic (max)
25.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
EconoPACK 2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FS25R12KE3G
Manufacturer:
EUPEC
Quantity:
530
Part Number:
FS25R12KE3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FS25R12KE3G
Quantity:
55
Part Number:
FS25R12KE3G
Quantity:
146
IGBT-Module
IGBT-Modules
NTC-Widerstand / NTC-thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
Verlustleistung
power dissipation
B-Wert
B-value
Innerer Wärmewiderstand; DC
thermal resistance, junction to case; DC
Übergangs Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemp.
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearence distance
CTI
comperative tracking index
Anzugsdrehmoment, mech. Befestigung
mounting torque
Gewicht
weight
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Charakteristische Werte / characteristic values
Thermische Eigenschaften / thermal properties
Mechanische Eigenschaften / mechanical properties
Technische Information / technical information
100
100
T
T
T
R
Transistor Wechelr. / transistor inverter
Diode Wechselrichter / diode inverter
pro Modul / per module
λ
Schraube / screw M5
Paste
c
c
c
2
= 25°C
= 100°C, R
= 25°C
= R
= 1W/m*K / λ
1
exp[B(1/T
FS25R12KE3 G
3 (8)
100
= 493Ω
2
- 1/T
grease
1
)]
= 1W/m*K
T
∆R/R
B
R
R
T
R
T
P
vj max
25/50
thCK
vj op
M
G
thJC
stg
25
25
DB_FS25R12KE3 _G_3.0.xls
min.
-40
-40
-5
3
-
-
-
-
-
-
-
Al
3375
0,02
typ.
225
180
7,5
10
2
5
-
-
-
-
-
-
-
-
O
3
2002-09-03
max.
0,86
1,50
150
125
125
20
5
6
-
-
-
mW
K/W
K/W
K/W
mm
mm
Nm
kΩ
°C
°C
°C
%
K
g