FP15R12KE3 Infineon Technologies, FP15R12KE3 Datasheet - Page 8

• Manufacturer Part Number: FP15R12KE3
• Description: IGBT Modules N-CH 1.2KV 27A
• Manufacturer: Infineon Technologies

Specifications of FP15R12KE3

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 27 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Packages: AG-EASY2-1
• Ic (max): 15.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EasyPIM™ 2

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
10,000
1,000
0,100
35
30
25
20
15
10
5
0
0
0,001
Sicherer Arbeitsbereich Wechselr. (RBSOA)
Reverse bias save operating area Inverter (RBSOA)
Transienter Wärmewiderstand Wechselr.
Transient thermal impedance Inverter
200
Zth-IGBT
Zth-FWD
0,01
400
FP15R12KE3
IGBT: r
FWD: r
t
t
i
i
i
i
i
[K/W]: 107,8e-3
[K/W]: 208,9e-3
[s]:
[s]:
V
CE
t [s]
600
[V]
3e-6
3e-6
1
0,1
8(12)
800
78,7e-3
Z
417,3e-3
1,05
10,56e-3
thJH
2
T
vj
= 125°C, V
= f (t)
I
C
1000
= f (V
10,16e-3
538,1e-3
821,9e-3
GE
82,6,3e-3
1
3
CE
Ic,chip
= ±15V, R
)
Vorläufig
Preliminary
1200
225,6e-3
536,8e-3
G
229,7e-3
=
4
1,12
68 Ohm
1400
10