BSM100GP60 Infineon Technologies, BSM100GP60 Datasheet - Page 9

• Manufacturer Part Number: BSM100GP60
• Description: IGBT Modules 600V 100A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM100GP60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 135 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
Durchlaßkennlinie der Brems-Chopper-Diode (typisch)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
Output characteristic brake-chopper-IGBT (typical)
0,5
0,5
Tj = 25°C
Tj = 125°C
1
BSM100GP60
Tj = 25°C
Tj = 125°C
1,5
V
1
V
CE
F
9(11)
[V]
[V]
2
1,5
2,5
I
F
= f (V
I
C
3
V
= f (V
GE
F
)
= 15 V
2
CE
)
3,5
2,5
4
DB-PIM-10.xls