FMC7G15US60 Fairchild Semiconductor, FMC7G15US60 Datasheet

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FMC7G15US60

Manufacturer Part Number
FMC7G15US60
Description
IGBT Modules
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMC7G15US60

Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
15 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2001 Fairchild Semiconductor Corporation
FMC7G15US60
Compact & Complex Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short circuit rated 10us @ T
• High speed switching
• Low saturation voltage : V
• High input impedance
• Built in brake and 3 phase rectifier circuit
• Fast & soft anti-parallel FWD
Applications
• AC & DC motor controls
• General purpose inverters
• Robotics
• Servo controls
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Inverter
&
Brake
Converter
Common
Mounting Torque
V
V
I
I
I
I
P
T
V
I
I
I
T
T
V
C
CM (1)
F
FM
O
FSM
2
SC
J
STG
CES
GES
D
RRM
ISO
t
Symbol
CE
C
(sat) = 2.2 V @ I
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting part Screw
= 100 C, V
GE
= 15V
T
C
C
= 25 C unless otherwise noted
= 15A
Description
R
S
T
@ T
@ T
@ T
@ T
@ AC 1minute
@ M4
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
N
P
Package Code : 21PM-AA
GB
B
E
Internal Circuit Diagram
P1
FMC7G15US60
EU
-GU
GU
-40 to +150
-40 to +125
1200
2500
± 20
1.25
600
200
164
15
30
15
30
45
10
20
EV
U
-GV
GV
IGBT
October 2001
EW
GW
-GW
V
FMC7G15US60 Rev. A1
Units
N.m
A
us
W
V
V
A
A
A
A
V
A
A
V
2
C
C
s
W

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FMC7G15US60 Summary of contents

Page 1

... Fairchild Semiconductor Corporation = 15V GE Package Code : 21PM-AA = 15A Internal Circuit Diagram unless otherwise noted C Description @ 100 100 1minute @ M4 October 2001 IGBT -GU -GV -GW FMC7G15US60 Units 600 V ± 1200 200 A 2 164 A s -40 to +150 C -40 to +125 C 2500 V 1.25 N.m FMC7G15US60 Rev. A1 ...

Page 2

... V = 300 15A 15V Inductive Load 300 15A 15V Inductive Load 125 300 15V 100 300 15A 15V GE -- Typ. Max. Units -- -- V 0 250 uA -- ± 100 nA 6.0 8.5 V 2.2 2.8 V 948 -- pF 101 -- 118 200 0.68 0. 212 350 1.04 1. FMC7G15US60 Rev. A1 ...

Page 3

... RRM T = 100 C C Parameter Typ unless otherwise noted C Min. Typ. Max. Units -- 1 130 ns -- 100 -- -- 1 100 unless otherwise noted Min. Typ. Max. Units -- 1 Max. Units 2.77 C/W 3.5 C/W 2.77 C/W 3.5 C/W 2.7 C FMC7G15US60 Rev. A1 ...

Page 4

... C 4 Duty cycle : 50 100 C Power Dissipation = 25W 0 100 150 0 Fig 4. Load Current vs. Frequency 20 Common Emitter T = 125 [V] GE Fig 6. Saturation Voltage vs Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [KHz] 30A 15A Gate - Emitter Voltage FMC7G15US60 Rev. A1 ...

Page 5

... Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter Ton Toff Tr Tf Toff 100 [A] C Fig 12. Turn-Off Characteristics vs. Collector Current =  15V = 300V 25  Ton = 125 ------ Tr 10 100 Gate Resistance 15V = 300V 25 125 ------ Eoff Eon Eoff 10 100 Gate Resistance 15V 25 125 ------ Collector Current, I [A] C FMC7G15US60 Rev ...

Page 6

... Fig 16. Turn-Off SOA Characteristics 10 1 0.1 0.01 500 600 700 -5 10 [V] CE Fig 18. Transient Thermal Impedance = 25 C 300 100 V CC 200 Gate Charge Safe Operating Area V = 20V 100 100 Collector-Emitter Voltage, V [V] CE IGBT : DIODE : - Rectangular Pulse Duration [sec] FMC7G15US60 Rev 1000 1 10 ...

Page 7

... Common Cathode 25 125 Forward Voltage, V Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation 0 [V] F Fig 20. Reverse Recovery Characteristics Common Cathode di/dt = 30A 25 100 Forward Current, I [A] F FMC7G15US60 Rev. A1 ...

Page 8

... Package Dimension 21PM-AA (FS PKG CODE BJ) ©2001 Fairchild Semiconductor Corporation Dimensions in Millimeters FMC7G15US60 Rev. A1 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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