SIC417CD-T1-E3 Vishay, SIC417CD-T1-E3 Datasheet - Page 12

IC DRIVER MOSF SYNC BUCK 55MLPQ

SIC417CD-T1-E3

Manufacturer Part Number
SIC417CD-T1-E3
Description
IC DRIVER MOSF SYNC BUCK 55MLPQ
Manufacturer
Vishay
Series
microBUCK™r
Datasheet

Specifications of SIC417CD-T1-E3

Topology
Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Function
Any Function
Number Of Outputs
2
Frequency - Switching
200kHz ~ 1MHz
Voltage/current - Output 1
0.5 V ~ 5.5 V, 10A
Voltage/current - Output 2
0.75 V ~ 5.25 V, 150mA
W/led Driver
No
W/supervisor
No
W/sequencer
No
Voltage - Supply
3 V ~ 28 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
*
Package / Case
*
Output Voltage
0.5 V to 5.5 V
Output Current
10 A
Input Voltage
3 V to 28 V
Switching Frequency
200 KHz to 1 MHz
Mounting Style
SMD/SMT
Duty Cycle (max)
95 %
Primary Input Voltage
28V
No. Of Outputs
1
Voltage Regulator Case Style
MLPQ
No. Of Pins
32
Operating Temperature Range
-25°C To +125°C
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIC417CD-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiC417
Vishay Siliconix
To avoid unwanted switch-over, the minimum difference
between the voltages for V
± 500 mV.
It is not recommended to use the switch-over feature for an
output voltage less than 3 V since this does not provide
sufficient voltage for the gate-source drive to the internal
p-channel switch-over MOSFET.
Switch-Over MOSFET Parasitic Diodes
The switch-over MOSFET contains parasitic diodes that are
inherent to its construction, as shown in figure 11.
There are some important design rules that must be followed
to prevent forward bias of these diodes. The following two
conditions need to be satisfied in order for the parasitic
diodes to stay off.
• V5V ≥ V
• V5V ≥ V
If either V
diode will turn on and the SiC417 operating current will flow
through this diode. This has the potential of damaging the
device.
ENL Pin and V
The ENL pin also acts as the switcher under-voltage lockout
for the V
via a resistor divider at the V
ENL is the enable/disable signal for the LDO. In order to
implement the V
that needs to be satisfied.
If the ENL pin transitions low within 2 switching cycles and is
< 1 V, then the LDO will turn off but the switcher remains on.
If ENL goes below the V
1 V, then the switcher will turn off but the LDO remains on.
The V
V
Note that it is possible to operate the switcher with the LDO
disabled, but the ENL pin must be below the logic low
threshold (0.4 V maximum).
ENL Logic Control of PWM Operation
When the ENL input is driven above 2.6 V, it is impossible to
determine if the LDO output is going to be used to power the
device or not. In self-powered operation where the LDO will
power the device, it is necessary during the LDO start-up to
hold the PWM switching off until the LDO has reached 90 %
of the final value. This is to prevent overloading the
current-limited LDO output during the LDO start-up.
www.vishay.com
12
IN
rising edge. The falling edge threshold is 2.4 V.
IN
Figure 11 - Switch-over MOSFET Parasitic Diodes
UVLO function has a typical threshold of 2.6 V on the
IN
V
LDO
LDO
OUT
Parastic diode
LDO
Switchover
control
supply. The V
or V
IN
IN
OUT
UVLO
UVLO there is also a timing requirement
is higher than V5V, then the respective
IN
IN
UVLO threshold and stays above
UVLO voltage is programmable
IN
V5V
, ENL and A
OUT
Switchover
MOSFET
and V
Parastic diode
GND
LDO
V
OUT
pins.
should be
However, if the switcher was previously operating (with EN/
PSV high but ENL at ground, and V5V supplied externally),
then it is undesirable to shut down the switcher.
To prevent this, when the ENL input is taken above 2.6 V
(above the V
P
running and the LDO will run through the start-up cycle
without affecting the switcher. If P
will not allow any PWM switching until the LDO output has
reached 90 % of it's final value.
On-Chip LDO Bias the SiC417
The following steps must be followed when using the onchip
LDO to bias the device.
• Connect V5V to V
• The LDO has an initial current limit of 85 mA at start-up
• When V
• Switching will be held off until V
Attempting to operate in self-powered mode in any other
configuration can cause unpredictable results and may
damage the device.
Design Procedure
When designing a switch mode power supply, the input
voltage range, load current, switching frequency, and
inductor ripple current must be specified.
The maximum input voltage (V
input voltage. The minimum input voltage (V
determined by the lowest input voltage after evaluating the
voltage drops due to connectors, fuses, switches, and PCB
traces.
The following parameters define the design:
• Nominal output voltage (V
• Static or DC output tolerance
• Transient response
• Maximum load current (I
There are two values of load current to evaluate - continuous
load current and peak load current. Continuous load current
relates to thermal stresses which drive the selection of the
inductor and input capacitors. Peak load current determines
instantaneous
requirements such as inductor saturation, output capacitors,
and design of the current limit circuit.
The following values are used in this design:
• V
• V
• f
• Load = 10 A maximum
GOOD
SW
with 12 V
V
current limit increases to 200 mA. At this time the LDO may
be used to supply the required bias current to the device.
IN
OUT
LDO
= 12 V ± 10 %
= 250 kHz
= 1.05 V ± 4 %
signal. If P
during start-up.
LDO
IN
IN
, therefore, do not connect any external load to
UVLO threshold), the internal logic checks the
reaches 90 % of its final value, the LDO
component
GOOD
LDO
before enabling the LDO.
is high, then the switcher is already
OUT
OUT
)
INMAX
)
stresses
GOOD
LDO
S10-1367-Rev. D, 14-Jun-10
) is the highest specified
Document Number: 69062
reaches regulation.
is low, then the LDO
and
INMIN
filtering
) is

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