BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 12

• Manufacturer Part Number: BLF202 T/R
• Description: RF MOSFET Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF202 T/R

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-409-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF202,115

Philips Semiconductors
PACKAGE OUTLINE
2003 Sep 19
Ceramic surface mounted package; 8 leads
HF/VHF power MOS transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT409A
0.093
0.081
2.36
2.06
A
0.023
0.017
0.58
0.43
H
b
A
0.009
0.007
0.23
0.18
c
8
1
IEC
0.234
0.198
5.94
5.03
e
D
0.203
0.197
D 2
H 1
5.16
5.00
D
D 2
JEDEC
0.194
0.158
4.93
4.01
E
b
REFERENCES
0
0.163
0.157
5
4
4.14
3.99
E 2
w 1
w 2
0.050
B
1.27
e
B
scale
EIAJ
12
2.5
0.294
0.286
7.47
7.26
H
0.173
0.167
4.39
4.24
H 1
5 mm
0.040
0.020
1.02
0.51
L
E 2
A
0.004
0.000
L
0.10
0.00
Q 1
c
0.010
0.25
PROJECTION
w 1
EUROPEAN
Q 1
0.010
0.25
w 2
Product specification
E
7
0
7
0
ISSUE DATE
BLF202
98-01-27
SOT409A