BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 7

• Manufacturer Part Number: BLF202 T/R
• Description: RF MOSFET Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF202 T/R

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-409-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF202,115

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, full pagewidth
HF/VHF power MOS transistor
Class-B operation; V
Fig.8
f = 175 MHz.
(dB)
G p
20
16
12
8
4
0
1
Power gain and efficiency as a functions of
load power; typical values.
50
input
1.5
DS
= 12.5 V; I
G p
D
C1
2
DQ
C2
= 20mA; f = 175 MHz.
2.5
L1
R3
R4
Fig.10 Test circuit for class-B operation.
R1
R2
3
P L (W)
C3
C4
MGP116
L2
3.5
100
80
60
40
20
0
(%)
D
D.U.T.
7
handbook, halfpage
L3
Class-B operation; V
Fig.9
C5
C7
MGP118
L5
(W)
P L
4
3
2
1
0
0
R5
L6
Load power as a function of input power;
typical values.
R6
V D
L4
C6
0.2
DS
= 12.5 V; I
C8
C9
0.4
DQ
C11
C10
= 20 mA; f = 175 MHz.
Product specification
0.6
P IN (W)
BLF202
MGP117
50
output
0.8