BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 7
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BLF202 T/R
Manufacturer Part Number
BLF202 T/R
Description
RF MOSFET Power TAPE-7 TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet
1.BLF202115.pdf
(14 pages)
Specifications of BLF202 T/R
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-409-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF202,115
Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, full pagewidth
HF/VHF power MOS transistor
Class-B operation; V
Fig.8
f = 175 MHz.
(dB)
G p
20
16
12
8
4
0
1
Power gain and efficiency as a functions of
load power; typical values.
50
input
1.5
DS
= 12.5 V; I
G p
D
C1
2
DQ
C2
= 20mA; f = 175 MHz.
2.5
L1
R3
R4
Fig.10 Test circuit for class-B operation.
R1
R2
3
P L (W)
C3
C4
MGP116
L2
3.5
100
80
60
40
20
0
(%)
D
D.U.T.
7
handbook, halfpage
L3
Class-B operation; V
Fig.9
C5
C7
MGP118
L5
(W)
P L
4
3
2
1
0
0
R5
L6
Load power as a function of input power;
typical values.
R6
V D
L4
C6
0.2
DS
= 12.5 V; I
C8
C9
0.4
DQ
C11
C10
= 20 mA; f = 175 MHz.
Product specification
0.6
P IN (W)
BLF202
MGP117
50
output
0.8