BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 6
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BLF202 T/R
Manufacturer Part Number
BLF202 T/R
Description
RF MOSFET Power TAPE-7 TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet
1.BLF202115.pdf
(14 pages)
Specifications of BLF202 T/R
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-409-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF202,115
Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: V
2003 Sep 19
handbook, halfpage
CW, class-B
MODE OF OPERATION
mb
HF/VHF power MOS transistor
V
Fig.7
= 25 C; R
GS
(pF)
C rs
= 0; f = 1 MHz.
5
4
3
2
1
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
GS
= 237 ; unless otherwise specified.
4
DS
= 15.5 V; f = 175 MHz at rated load power.
8
(MHz)
175
f
12
V DS (V)
MGP115
12.5
V
16
(V)
DS
6
(mA)
I
20
DQ
(W)
P
2
L
typ. 13
(dB)
G
10
p
Product specification
BLF202
typ. 55
(%)
50
D