BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 6

• Manufacturer Part Number: BLF202 T/R
• Description: RF MOSFET Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF202 T/R

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-409-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF202,115

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: V
2003 Sep 19
handbook, halfpage
CW, class-B
MODE OF OPERATION
mb
HF/VHF power MOS transistor
V
Fig.7
= 25 C; R
GS
(pF)
C rs
= 0; f = 1 MHz.
5
4
3
2
1
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
GS
= 237 ; unless otherwise specified.
4
DS
= 15.5 V; f = 175 MHz at rated load power.
8
(MHz)
175
f
12
V DS (V)
MGP115
12.5
V
16
(V)
DS
6
(mA)
I
20
DQ
(W)
P
2
L
typ. 13
(dB)
G
10
p
Product specification
BLF202
typ. 55
(%)
50
D