BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 9

• Manufacturer Part Number: BLF202 T/R
• Description: RF MOSFET Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF202 T/R

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-409-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF202,115

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class B-operation; V
R
Fig.11 Input impedance as a function of frequency
GS
( )
Z i
250
125
125
= 237 ; P
0
0
Fig.13 Definition of MOS impedance.
(series of components); typical values.
L
Z i
= 2 W.
50
DS
= 12.5 V; I
r i
x i
100
DQ
Z L
= 20 mA;
MBA379
150
f (MHz)
MGP119
200
9
handbook, halfpage
handbook, halfpage
Class B-operation; V
R
Fig.12 Load impedance as a function of frequency
Class B-operation; V
R
Fig.14 Power gain as a function of frequency;
GS
(dB)
GS
G p
( )
Z L
= 237 ; P
= 237 ; P
20
15
10
50
40
30
20
10
5
0
0
0
0
(series components); typical values.
typical values.
L
L
= 2 W.
= 2 W.
50
50
DS
DS
= 12.5 V; I
= 12.5 V; I
100
100
DQ
DQ
= 20 mA;
= 20 mA;
R L
X L
Product specification
150
150
f (MHz)
f (MHz)
BLF202
MGP121
MGP120
200
200