BLF202 T/R NXP Semiconductors, BLF202 T/R Datasheet - Page 9
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BLF202 T/R
Manufacturer Part Number
BLF202 T/R
Description
RF MOSFET Power TAPE-7 TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet
1.BLF202115.pdf
(14 pages)
Specifications of BLF202 T/R
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-409-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF202,115
Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class B-operation; V
R
Fig.11 Input impedance as a function of frequency
GS
( )
Z i
250
125
125
= 237 ; P
0
0
Fig.13 Definition of MOS impedance.
(series of components); typical values.
L
Z i
= 2 W.
50
DS
= 12.5 V; I
r i
x i
100
DQ
Z L
= 20 mA;
MBA379
150
f (MHz)
MGP119
200
9
handbook, halfpage
handbook, halfpage
Class B-operation; V
R
Fig.12 Load impedance as a function of frequency
Class B-operation; V
R
Fig.14 Power gain as a function of frequency;
GS
(dB)
GS
G p
( )
Z L
= 237 ; P
= 237 ; P
20
15
10
50
40
30
20
10
5
0
0
0
0
(series components); typical values.
typical values.
L
L
= 2 W.
= 2 W.
50
50
DS
DS
= 12.5 V; I
= 12.5 V; I
100
100
DQ
DQ
= 20 mA;
= 20 mA;
R L
X L
Product specification
150
150
f (MHz)
f (MHz)
BLF202
MGP121
MGP120
200
200