BLF548 NXP Semiconductors, BLF548 Datasheet - Page 10

RF MOSFET Power BULK TNS-RFPR

BLF548

Manufacturer Part Number
BLF548
Description
RF MOSFET Power BULK TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF548

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
330 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-262-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF548,112

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Philips Semiconductors
2003 Sep 26
handbook, full pagewidth
handbook, full pagewidth
UHF push-pull power MOS transistor
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a
direct contact between upper and lower sheets.
strap
strap
L1/L2
L3
rivets
C2
C1
C3
C4
Fig.12 Component layout for 500 MHz class-B test circuit.
L4
L5
C5
C6
R3
R4
R6
R2
strap
strap
C10
C11
C8
C7
L6
C9
L7
200 mm
L8
L9
strap
strap
10
C18
C19
C14
C15
L13
L14
C20
C21
L12
L15
L16
L10
L11
R7
R8
L17
L19
L18
V DS
V DS
C13
C16
C22
C12
C17
L20
L21
C23
C24
rivets
L22/L23
Product specification
L24
MBC231 - 1
MBC230
strap
strap
BLF548
mm
70

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