BLF548 NXP Semiconductors, BLF548 Datasheet - Page 3

• Manufacturer Part Number: BLF548
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF548

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-262-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF548,112

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 26
handbook, halfpage
Per transistor section unless otherwise specified
V
V
I
P
T
T
R
R
D
SYMBOL
stg
j
SYMBOL
DS
GS
tot
th j-mb
th mb-h
UHF push-pull power MOS transistor
(1) Current in this area may be limited by R
(2) T
Total device; both sections equally loaded.
10
(A)
I D
10
mb
2
1
1
= 25 C.
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
(1)
Fig.2 DC SOAR.
PARAMETER
PARAMETER
10
(2)
DSon
V DS (V)
.
MRA997
10
2
T
equally loaded
T
both sections equally loaded
total device; both sections equally
loaded
mb
mb
= 25 C; P
3
25 C; total device; both sections
handbook, halfpage
P tot
(W)
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
CONDITIONS
CONDITIONS
400
350
300
250
200
150
100
tot
50
0
= 330 W; total device;
0
Fig.3 Power derating curves.
20
(2)
(1)
40
60
80
MIN.
65
VALUE
0.15
Product specification
0.5
100
T h (
65
15
330
+150
200
MAX.
20
BLF548
MRA532
o
120
C)
UNIT
K/W
K/W
V
V
A
W
UNIT
C
C