BLF548 NXP Semiconductors, BLF548 Datasheet - Page 6
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BLF548
Manufacturer Part Number
BLF548
Description
RF MOSFET Power BULK TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet
1.BLF548112.pdf
(15 pages)
Specifications of BLF548
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
330 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-262-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF548,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF548
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
BLF548
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in a common source, class-B, push-pull test circuit.
Ruggedness in class-B operation
The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the
following conditions: V
2003 Sep 26
handbook, halfpage
CW, class-B
h
UHF push-pull power MOS transistor
= 25 C; R
Fig.8
(pF)
C rs
100
80
60
40
20
MODE OF OPERATION
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
th mb-h
= 0.15 K/W, unless otherwise specified.
10
DS
= 28 V; f = 500 MHz at rated output power.
20
V DS (V)
(MHz)
MRA521
500
f
30
V
(V)
28
6
DS
2 x 160
(mA)
I
DQ
(W)
150
P
L
typ. 11
(dB)
G
Product specification
10
p
BLF548
typ. 55
(%)
50
D