BLF548 NXP Semiconductors, BLF548 Datasheet - Page 5
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BLF548
Manufacturer Part Number
BLF548
Description
RF MOSFET Power BULK TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet
1.BLF548112.pdf
(15 pages)
Specifications of BLF548
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
330 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-262-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF548,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF548
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
BLF548
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
UHF push-pull power MOS transistor
(mV/K)
R DSon
V
Fig.4
I
Fig.6
D
TC
DS
= 4.8 A; V
= 10 V.
0.5
0.4
0.3
0.2
0.1
10
3
2
1
0
0
1
2
3
4
0
2
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
GS
= 10 V.
40
10
1
80
T j (
1
o
C)
I D (A)
120
MRA524
MRA522
10
5
handbook, halfpage
handbook, halfpage
V
Fig.5
Fig.7
DS
(pF)
C
(A)
400
300
200
100
= 10 V; T
I D
25
20
15
10
5
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
C os
C is
j
= 25 C.
4
10
8
20
Product specification
12
V DS (V)
V GS (V)
BLF548
MRA529
MRA525
30
16