BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 18

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
9. Test information
9397 750 14955
Product data sheet
Fig 29. Cross-modulation test set-up for amplifier A
Fig 30. Cross-modulation test set-up for amplifier B
R GEN
50
R GEN
V i
50
50
V i
50
50
50
4.7 nF
4.7 nF
4.7 nF
V
V
5 V
AGC
4.7 nF
4.7 nF
4.7 nF
GG
Rev. 01 — 28 July 2005
10 k
R G1
V
V
0 V
G1B
G1A
AGC
GG
G2
10 k
R G1
G1B
G1A
G2
BF1207
BF1207
DB
S
DA
V
V
DS(B)
DS(A)
5 V
5V
DB
S
DA
L1
2.2 H
L2
2.2 H
V
V
4.7 nF
4.7 nF
4.7 nF
DS(B)
DS(A)
5 V
5V
L1
2.2 H
L2
2.2 H
001aac907
4.7 nF
4.7 nF
4.7 nF
Dual N-channel dual gate MOSFET
001aac908
R L
50
R L
50
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BF1207
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