BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 20

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
11. Revision history
Table 12:
9397 750 14955
Product data sheet
Document ID
BF1207_1
Revision history
Release date
20050728
Data sheet status
Product data sheet
Rev. 01 — 28 July 2005
Change notice
-
Dual N-channel dual gate MOSFET
Doc. number
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Supersedes
-
BF1207
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