BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 9

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
9397 750 14955
Product data sheet
Fig 9. Amplifier A: unwanted voltage for 1 %
Fig 11. Amplifier A: drain current as a function of gain reduction; typical values
(dB V)
V
unw
120
110
100
90
80
V
f
cross-modulation as a function of gain
reduction; typical values
V
unw
0
DS(A)
DS(A)
= 60 MHz; T
= V
= V
10
DS(B)
DS(B)
= 5 V; V
= 5 V; V
amb
20
= 25 C; see
G1-S(B)
G1-S(B)
30
(mA)
= 0 V; f
= 0 V; f = 50 MHz; T
I
D
32
24
16
Figure
gain reduction (dB)
8
0
0
40
w
001aac887
= 50 MHz;
29.
10
50
Rev. 01 — 28 July 2005
amb
20
= 25 C; see
Fig 10. Amplifier A: gain reduction as a function of
30
reduction
gain
(dB)
Figure
10
20
30
40
50
gain reduction (dB)
0
V
see
AGC voltage; typical values
0
DS(A)
40
001aac889
Figure
29.
= V
DS(B)
50
29.
1
Dual N-channel dual gate MOSFET
= 5 V; V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
G1-S(B)
2
= 0 V; f = 50 MHz;
3
V
001aac888
AGC
BF1207
(V)
4
9 of 22