BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 3

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
3. Ordering information
4. Marking
5. Limiting values
9397 750 14955
Product data sheet
Table 3:
Table 4:
[1]
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
BF1207
Type number
BF1207
Symbol
Per MOSFET
V
I
I
I
P
T
T
D
G1
G2
stg
j
DS
tot
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
T
sp
is the temperature at the soldering point of the source lead.
Ordering information
Marking
Limiting values
Parameter
drain-source voltage
drain current
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
Package
Name
-
Rev. 01 — 28 July 2005
Description
plastic surface mounted package; 6 leads
Conditions
DC
DC
T
sp
Marking code
M2*
107 C
Dual N-channel dual gate MOSFET
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
Min
-
-
-
-
-
-
65
Max
6
30
180
+150
150
10
10
BF1207
Unit
V
mA
mA
mA
mW
C
C
Version
SOT363
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