FEP16FT Fairchild Semiconductor, FEP16FT Datasheet

DIODE FAST 300V 8A TO220AB

FEP16FT

Manufacturer Part Number
FEP16FT
Description
DIODE FAST 300V 8A TO220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FEP16FT

Voltage - Forward (vf) (max) @ If
1.3V @ 8A
Current - Reverse Leakage @ Vr
10µA @ 300V
Current - Average Rectified (io) (per Diode)
8A
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
300 V
Forward Voltage Drop
1.3 V @ 8 A
Recovery Time
50 ns
Forward Continuous Current
16 A @ Ta=100C
Max Surge Current
200 A
Reverse Current Ir
10 uA
Power Dissipation
8.33 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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2001 Fairchild Semiconductor Corporation
Features
• Average Forward Current Rating at 16A (8A per Diode).
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
*
Thermal Characteristics
Electrical Characteristics
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Symbol
P
R
R
High reliability.
Low forward voltage drop.
High surge current capacity.
High current capability.
V
I
I
T
T
V
t
I
C
F(AV)
FSM
D
rr
R
stg
J
RRM
JA
JL
F
T
Forward Voltage @ 8.0A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
Non-repetitive Peak Forward Surge
Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
I
F
.375 " lead length @ T
8.3 ms Single Half-Sine-Wave
V
= 0.5 A, I
R
= 4.0. f = 1.0 MHz
T
T
A
A
Parameter
Parameter
= 25 C
= 100 C
R
= 1.0 A, I
Parameter
FEP16AT - FEP16JT
RR
A
= 0.25 A
= 100 C
R
1
2
T
3
A
= 25°C unless otherwise noted
T
A
16AT
16AT
= 25°C unless otherwise noted
50
TO-220AB
16BT
100
16BT
0.95
35
16CT
16CT 16DT
150
85
16DT
200
-55 to +150
-55 to +150
Device
Value
200
500
16
10
16FT
16FT
300
Value
8.33
2.2
15
1.3
16GT
16GT
400
50
PIN 1
PIN 3
PIN 1
PIN 3
PIN 1
PIN 3
16HT
500
16HT
Positive CT
Negative CT
Doubler
Suffix "A"
Suffix "D"
1.5
60
16JT
FEP16AT - FEP16JT, Rev. C
600
16JT
CASE
PIN 2
CASE
PIN 2
CASE
PIN 2
-
AC
+
Units
Units
Units
V
A
A
pF
ns
C
C
C/W
C/W
V
W
A
A

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FEP16FT Summary of contents

Page 1

... Reverse Recovery Time 0 1 Reverse Current @ rated 100 Total Capacitance 4. 1.0 MHz R 2001 Fairchild Semiconductor Corporation TO-220AB T = 25°C unless otherwise noted A 16AT 16BT 16CT 16DT 50 100 150 200 = 100 C A -55 to +150 -55 to +150 T = 25°C unless otherwise noted A 16AT ...

Page 2

... Fairchild Semiconductor Corporation 200 160 120 125 150 175 1 Figure 2. Non-Repetitive Surge Current 1000 100 10 1 0.1 1.4 1.6 1.8 [V] F Figure 4. Reverse Current vs Reverse Voltage 100 FEP16AT-FEP16DT FEP16FT-FEP16JT Reverse Voltage, V [V] R Figure 5. Total Capacitance +0.5A (-) 0 Pulse Generator -0.25A (Note 2) (+) OSCILLOSCOPE (Note 1) -1. ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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