APT30DQ100BCTG Microsemi Power Products Group, APT30DQ100BCTG Datasheet
APT30DQ100BCTG
Manufacturer Part Number
APT30DQ100BCTG
Description
DIODE ULT FAST 30A 1000V TO-247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT30DQ100BCTG.pdf
(4 pages)
Specifications of APT30DQ100BCTG
Voltage - Forward (vf) (max) @ If
3V @ 30A
Current - Reverse Leakage @ Vr
100µA @ 1000V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Reverse Recovery Time (trr)
240ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PRODUCT APPLICATIONS
• Anti-Parallel Diode
• Free Wheeling Diode
• Snubber Diode
• PFC
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
I
V
V
F(RMS)
I
J
E
I
F(AV)
I
,T
FSM
C
V
RWM
V
RRM
T
RM
AVL
-Switchmode Power Supply
-Inverters
-Motor Controllers
-Converters
-Inverters
R
F
T
STG
L
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular TO-247 Package
• Low Forward Voltage
• Low Leakage Current
• Avalanche Energy Rated
R
= 200V
Microsemi Website - http://www.microsemi.com
C
= 102°C, Duty Cycle = 0.5)
J
= 45°C, 8.3ms)
I
I
I
V
V
F
F
F
R
R
= 30A
= 60A
= 30A, T
= 1000V
= 1000V, T
All Ratings Per Leg: T
J
= 125°C
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
J
Density
= 125°C
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specifi ed.
MIN
APT30DQ100BCT(G)
APT30DQ100BCT
APT30DQ100BCTG*
-55 to 175
1000V
1000
3.06
1.92
TYP
150
300
2.5
26
30
43
20
1 - Anode 1
2 - Common Cathode
3 - Anode 2
1
Back of Case - Cathode
1
(BCT)
2
MAX
3
100
500
3.0
2
30A
Amps
UNIT
UNIT
Volts
Volts
mJ
µA
pF
°C
3
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APT30DQ100BCTG Summary of contents
Page 1
... I = 30A 125° 1000V 1000V 125° 200V Microsemi Website - http://www.microsemi.com 1000V 30A APT30DQ100BCT APT30DQ100BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (BCT Anode Common Cathode Back of Case - Cathode 3 - Anode 2 = 25°C unless otherwise specifi ed. C APT30DQ100BCT(G) 1000 30 43 150 ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic t Reverse Recovery Time rr t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current RRM t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current ...
Page 3
TYPICAL PERFORMANCE CURVES 100 175° 125° 0.5 1.0 1.5 2.0 2 ANODE-TO-CATHODE VOLTAGE (V) F Figure 2. Forward Current vs. Forward ...
Page 4
I - Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery Time, measured from ...